EFFECTS OF RAPID THERMAL-PROCESSING ON ELECTRON TRAPS IN MOLECULAR-BEAM-EPITAXIAL GAAS

被引：15

作者：

KITAGAWA, A

USAMI, A

WADA, T

TOKUDA, Y

KANO, H

机构：

[1] AICHI INST TECHNOL,DEPT ELECTR,YAKUSA,TOYOTA 47003,JAPAN

[2] TOYOTA CENT RES & DEV LABS INC,AICHI 48011,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 02期

关键词：

D O I：

10.1063/1.343091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：606 / 611

页数：6

共 30 条

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