DIRECT MEASUREMENT OF EVAPORATION DURING RAPID THERMAL-PROCESSING OF CAPPED GAAS

被引：31

作者：

HAYNES, TE ^{[1
]}

CHU, WK ^{[1
]}

PICRAUX, ST ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 16期

关键词：

D O I：

10.1063/1.97973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1071 / 1073

页数：3

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GHEZZO, M
BROWN, DM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 146 - 148
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GROVE, AS
LEISTIKO, O
SAH, CT
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (09) : 985 - &
[3] INITIAL DECOMPOSITION OF GAAS DURING RAPID THERMAL ANNEALING
HAYNES, TE
CHU, WK
ASELAGE, TL
PICRAUX, ST
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (11) : 666 - 668
[4] ION-IMPLANTATION FOR HIGH-SPEED III-V ICS
NISHI, H
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 395 - 401
[5] VAPOR-PRESSURES OF ARSENIC OVER INAS(C) AND GAAS (C) - ENTHALPIES OF FORMATION OF INAS(C) AND GAAS(C)
PUPP, C
MURRAY, JJ
POTTIE, RF
[J]. JOURNAL OF CHEMICAL THERMODYNAMICS, 1974, 6 (02) : 123 - 134
[6] SI FILM AS AN ANNEALING CAP FOR SI-IMPLANTED GAAS
SHIM, TE
ITOH, T
YAMAMOTO, Y
SUZUKI, S
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 641 - 643