SI FILM AS AN ANNEALING CAP FOR SI-IMPLANTED GAAS

被引：12

作者：

SHIM, TE

ITOH, T

YAMAMOTO, Y

SUZUKI, S

机构：

[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,TOKYO 184,JAPAN

[2] ADV MAT LAB INC,SAITAMA 340,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.96730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：641 / 643

页数：3

相关论文

共 13 条

[1] SATURATION OF SI ACTIVATION AT HIGH DOPING LEVELS IN GAAS
BANWELL, TC
MAENPAA, M
NICOLET, MA
TANDON, JL
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (06) : 507 - 514
[2] ELIOTT DJ, 1982, INTEGRATED CIRCUIT F, P248
[3] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL
GREINER, ME
GIBBONS, JF
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 750 - 752
[4] SIOXNY CAPPED ANNEALING FOR SI-IMPLANTED GAAS
KUZUHARA, M
KOHZU, H
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 527 - 529
[5] SILICON DOPING OF MBE-GROWN GAAS FILMS
NEAVE, JH
DOBSON, PJ
HARRIS, JJ
DAWSON, P
JOYCE, BA
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 32 (04): : 195 - 200
[6] HIGH-TEMPERATURE ANNEALING OF SIO2-GAAS SYSTEM
OHDOMARI, I
MIZUTANI, S
KUME, H
MORI, M
KIMURA, I
YONEDA, K
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (04) : 218 - 220
[7] OKAMURA S, 1979, APPL PHYS LETT, V40, P689
[8] GROWTH-CONDITIONS OF DEPOSITED SI FILMS IN SOLID-PHASE EPITAXY
SAITOH, S
SUGII, T
ISHIWARA, H
FURUKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) : L130 - L132
[9] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K
SZE, SM
IRVIN, JC
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 599 - &
[10] SZE SM, 1981, PHYS SEMICONDUCTOR D, P850