ION-IMPLANTATION FOR HIGH-SPEED III-V ICS

被引：16

作者：

NISHI, H

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期

关键词：

D O I：

10.1016/0168-583X(85)90587-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：395 / 401

页数：7

共 26 条

[1] APPLICATION OF THERMAL PULSE ANNEALING TO ION-IMPLANTED GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

ASBECK, PM ;

MILLER, DL ;

BABCOCK, EJ ;

KIRKPATRICK, CG .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :81-84

[2]

ASBECK PM, 1983, 1983 EL MAT C VERM

[3]

CIRILLO NC, 1984, 42ND ANN DEV RES C

[4]

ELLIOT KR, 1984, APPL PHYS LETT, V40, P898

[5]

HICKINGBOTTOM R, 1973, RAD EFFECTS, V17, P31

[6]

KAKIMOTO K, 1984, 9TH P INT C RAM SPEC

[7]

KASAHARA J, 1982, P SEMIINSULATING 3 5, P238

[8]

MATSUMOTO K, 1984, 42ND P ANN DEV RES C

[9] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J].

MIYAZAWA, S ;

ISHII, Y ;

ISHIDA, S ;

NANISHI, Y .

APPLIED PHYSICS LETTERS, 1983, 43 (09) :853-855

[10] A GAAS 16X16 BIT PARALLEL MULTIPLIER [J].

NAKAYAMA, Y ;

SUYAMA, K ;

SHIMIZU, H ;

YOKOYAMA, N ;

OHNISHI, H ;

SHIBATOMI, A ;

ISHIKAWA, H .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (05) :599-603

← 1 2 3 →