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PRODUCTION OF THE MIDGAP ELECTRON TRAP (EL2) IN MOLECULAR-BEAM-EPITAXIAL GAAS BY RAPID THERMAL-PROCESSING
被引:19
作者
:
KITAGAWA, A
论文数:
0
引用数:
0
h-index:
0
机构:
AICHI INST TECHNOL,DEPT ELECTR,YAKUSA,TOYOTA 47003,JAPAN
KITAGAWA, A
USAMI, A
论文数:
0
引用数:
0
h-index:
0
机构:
AICHI INST TECHNOL,DEPT ELECTR,YAKUSA,TOYOTA 47003,JAPAN
USAMI, A
WADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
AICHI INST TECHNOL,DEPT ELECTR,YAKUSA,TOYOTA 47003,JAPAN
WADA, T
TOKUDA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
AICHI INST TECHNOL,DEPT ELECTR,YAKUSA,TOYOTA 47003,JAPAN
TOKUDA, Y
KANO, H
论文数:
0
引用数:
0
h-index:
0
机构:
AICHI INST TECHNOL,DEPT ELECTR,YAKUSA,TOYOTA 47003,JAPAN
KANO, H
机构
:
[1]
AICHI INST TECHNOL,DEPT ELECTR,YAKUSA,TOYOTA 47003,JAPAN
[2]
TOYOTA CENT RES & DEV INC,NAGAKUTE,AICHI 48011,JAPAN
来源
:
JOURNAL OF APPLIED PHYSICS
|
1987年
/ 61卷
/ 03期
关键词
:
D O I
:
10.1063/1.338172
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1215 / 1217
页数:3
相关论文
共 15 条
[1]
DEFECTS INTRODUCED IN SILICON-WAFERS DURING RAPID ISOTHERMAL ANNEALING - THERMOELASTIC AND THERMOPLASTIC EFFECTS
[J].
BENTINI, G
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, Istituto LAMEL, Bologna, Italy, CNR, Istituto LAMEL, Bologna, Italy
BENTINI, G
;
CORRERA, L
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, Istituto LAMEL, Bologna, Italy, CNR, Istituto LAMEL, Bologna, Italy
CORRERA, L
;
DONOLATO, C
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, Istituto LAMEL, Bologna, Italy, CNR, Istituto LAMEL, Bologna, Italy
DONOLATO, C
.
JOURNAL OF APPLIED PHYSICS,
1984,
56
(10)
:2922
-2929
[2]
DEEP STATES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
[J].
BLOOD, P
论文数:
0
引用数:
0
h-index:
0
BLOOD, P
;
HARRIS, JJ
论文数:
0
引用数:
0
h-index:
0
HARRIS, JJ
.
JOURNAL OF APPLIED PHYSICS,
1984,
56
(04)
:993
-1007
[3]
MEASUREMENTS OF DEEP LEVELS IN HIGH-PURITY MOLECULAR-BEAM EPITAXIAL GAAS
[J].
DEJULE, RY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
DEJULE, RY
;
HAASE, MA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
HAASE, MA
;
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
STILLMAN, GE
;
PALMATEER, SC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
PALMATEER, SC
;
HWANG, JCM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
HWANG, JCM
.
JOURNAL OF APPLIED PHYSICS,
1985,
57
(12)
:5287
-5289
[4]
NATURE AND DISTRIBUTION OF ELECTRICALLY ACTIVE DEFECTS IN SI-IMPLANTED AND LAMP-ANNEALED GAAS
[J].
DHAR, S
论文数:
0
引用数:
0
h-index:
0
DHAR, S
;
SEO, KS
论文数:
0
引用数:
0
h-index:
0
SEO, KS
;
BHATTACHARYA, PK
论文数:
0
引用数:
0
h-index:
0
BHATTACHARYA, PK
.
JOURNAL OF APPLIED PHYSICS,
1985,
58
(11)
:4216
-4220
[5]
CONTOUR MAPS OF EL2 DEEP LEVEL IN LIQUID-ENCAPSULATED CZOCHRALSKI GAAS
[J].
HOLMES, DE
论文数:
0
引用数:
0
h-index:
0
HOLMES, DE
;
CHEN, RT
论文数:
0
引用数:
0
h-index:
0
CHEN, RT
.
JOURNAL OF APPLIED PHYSICS,
1984,
55
(10)
:3588
-3594
[6]
INFRARED RAPID THERMAL ANNEALING FOR GAAS DEVICE FABRICATION
[J].
KOHZU, H
论文数:
0
引用数:
0
h-index:
0
KOHZU, H
;
KUZUHARA, M
论文数:
0
引用数:
0
h-index:
0
KUZUHARA, M
;
TAKAYAMA, Y
论文数:
0
引用数:
0
h-index:
0
TAKAYAMA, Y
.
JOURNAL OF APPLIED PHYSICS,
1983,
54
(09)
:4998
-5003
[7]
STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY
[J].
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
;
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
;
GOSSARD, AC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
GOSSARD, AC
;
ILEGEMS, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ILEGEMS, M
;
WIEGMANN, W
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
WIEGMANN, W
.
JOURNAL OF APPLIED PHYSICS,
1976,
47
(06)
:2558
-2564
[8]
MARTIN GM, 1977, ELECTRON LETT, V13, P181
[9]
CORRELATION BETWEEN ELECTRON TRAPS AND GROWTH-PROCESSES IN N-GAAS PREPARED BY MOLECULAR-BEAM EPITAXY
[J].
NEAVE, JH
论文数:
0
引用数:
0
h-index:
0
NEAVE, JH
;
BLOOD, P
论文数:
0
引用数:
0
h-index:
0
BLOOD, P
;
JOYCE, BA
论文数:
0
引用数:
0
h-index:
0
JOYCE, BA
.
APPLIED PHYSICS LETTERS,
1980,
36
(04)
:311
-312
[10]
RAPID THERMAL ANNEALING OF MODULATION-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES FOR DEVICE APPLICATIONS
[J].
PEARAH, P
论文数:
0
引用数:
0
h-index:
0
机构:
GOULD INC,RES CTR,ROLLING MEADOWS,IL 60008
PEARAH, P
;
HENDERSON, T
论文数:
0
引用数:
0
h-index:
0
机构:
GOULD INC,RES CTR,ROLLING MEADOWS,IL 60008
HENDERSON, T
;
KLEM, J
论文数:
0
引用数:
0
h-index:
0
机构:
GOULD INC,RES CTR,ROLLING MEADOWS,IL 60008
KLEM, J
;
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
GOULD INC,RES CTR,ROLLING MEADOWS,IL 60008
MORKOC, H
;
NILSSON, B
论文数:
0
引用数:
0
h-index:
0
机构:
GOULD INC,RES CTR,ROLLING MEADOWS,IL 60008
NILSSON, B
;
WU, O
论文数:
0
引用数:
0
h-index:
0
机构:
GOULD INC,RES CTR,ROLLING MEADOWS,IL 60008
WU, O
;
SWANSON, AW
论文数:
0
引用数:
0
h-index:
0
机构:
GOULD INC,RES CTR,ROLLING MEADOWS,IL 60008
SWANSON, AW
;
CHEN, DR
论文数:
0
引用数:
0
h-index:
0
机构:
GOULD INC,RES CTR,ROLLING MEADOWS,IL 60008
CHEN, DR
.
JOURNAL OF APPLIED PHYSICS,
1984,
56
(06)
:1851
-1855
←
1
2
→
共 15 条
[1]
DEFECTS INTRODUCED IN SILICON-WAFERS DURING RAPID ISOTHERMAL ANNEALING - THERMOELASTIC AND THERMOPLASTIC EFFECTS
[J].
BENTINI, G
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, Istituto LAMEL, Bologna, Italy, CNR, Istituto LAMEL, Bologna, Italy
BENTINI, G
;
CORRERA, L
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, Istituto LAMEL, Bologna, Italy, CNR, Istituto LAMEL, Bologna, Italy
CORRERA, L
;
DONOLATO, C
论文数:
0
引用数:
0
h-index:
0
机构:
CNR, Istituto LAMEL, Bologna, Italy, CNR, Istituto LAMEL, Bologna, Italy
DONOLATO, C
.
JOURNAL OF APPLIED PHYSICS,
1984,
56
(10)
:2922
-2929
[2]
DEEP STATES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
[J].
BLOOD, P
论文数:
0
引用数:
0
h-index:
0
BLOOD, P
;
HARRIS, JJ
论文数:
0
引用数:
0
h-index:
0
HARRIS, JJ
.
JOURNAL OF APPLIED PHYSICS,
1984,
56
(04)
:993
-1007
[3]
MEASUREMENTS OF DEEP LEVELS IN HIGH-PURITY MOLECULAR-BEAM EPITAXIAL GAAS
[J].
DEJULE, RY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
DEJULE, RY
;
HAASE, MA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
HAASE, MA
;
STILLMAN, GE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
STILLMAN, GE
;
PALMATEER, SC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
PALMATEER, SC
;
HWANG, JCM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
HWANG, JCM
.
JOURNAL OF APPLIED PHYSICS,
1985,
57
(12)
:5287
-5289
[4]
NATURE AND DISTRIBUTION OF ELECTRICALLY ACTIVE DEFECTS IN SI-IMPLANTED AND LAMP-ANNEALED GAAS
[J].
DHAR, S
论文数:
0
引用数:
0
h-index:
0
DHAR, S
;
SEO, KS
论文数:
0
引用数:
0
h-index:
0
SEO, KS
;
BHATTACHARYA, PK
论文数:
0
引用数:
0
h-index:
0
BHATTACHARYA, PK
.
JOURNAL OF APPLIED PHYSICS,
1985,
58
(11)
:4216
-4220
[5]
CONTOUR MAPS OF EL2 DEEP LEVEL IN LIQUID-ENCAPSULATED CZOCHRALSKI GAAS
[J].
HOLMES, DE
论文数:
0
引用数:
0
h-index:
0
HOLMES, DE
;
CHEN, RT
论文数:
0
引用数:
0
h-index:
0
CHEN, RT
.
JOURNAL OF APPLIED PHYSICS,
1984,
55
(10)
:3588
-3594
[6]
INFRARED RAPID THERMAL ANNEALING FOR GAAS DEVICE FABRICATION
[J].
KOHZU, H
论文数:
0
引用数:
0
h-index:
0
KOHZU, H
;
KUZUHARA, M
论文数:
0
引用数:
0
h-index:
0
KUZUHARA, M
;
TAKAYAMA, Y
论文数:
0
引用数:
0
h-index:
0
TAKAYAMA, Y
.
JOURNAL OF APPLIED PHYSICS,
1983,
54
(09)
:4998
-5003
[7]
STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY
[J].
LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
;
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
;
GOSSARD, AC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
GOSSARD, AC
;
ILEGEMS, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ILEGEMS, M
;
WIEGMANN, W
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
WIEGMANN, W
.
JOURNAL OF APPLIED PHYSICS,
1976,
47
(06)
:2558
-2564
[8]
MARTIN GM, 1977, ELECTRON LETT, V13, P181
[9]
CORRELATION BETWEEN ELECTRON TRAPS AND GROWTH-PROCESSES IN N-GAAS PREPARED BY MOLECULAR-BEAM EPITAXY
[J].
NEAVE, JH
论文数:
0
引用数:
0
h-index:
0
NEAVE, JH
;
BLOOD, P
论文数:
0
引用数:
0
h-index:
0
BLOOD, P
;
JOYCE, BA
论文数:
0
引用数:
0
h-index:
0
JOYCE, BA
.
APPLIED PHYSICS LETTERS,
1980,
36
(04)
:311
-312
[10]
RAPID THERMAL ANNEALING OF MODULATION-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES FOR DEVICE APPLICATIONS
[J].
PEARAH, P
论文数:
0
引用数:
0
h-index:
0
机构:
GOULD INC,RES CTR,ROLLING MEADOWS,IL 60008
PEARAH, P
;
HENDERSON, T
论文数:
0
引用数:
0
h-index:
0
机构:
GOULD INC,RES CTR,ROLLING MEADOWS,IL 60008
HENDERSON, T
;
KLEM, J
论文数:
0
引用数:
0
h-index:
0
机构:
GOULD INC,RES CTR,ROLLING MEADOWS,IL 60008
KLEM, J
;
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
GOULD INC,RES CTR,ROLLING MEADOWS,IL 60008
MORKOC, H
;
NILSSON, B
论文数:
0
引用数:
0
h-index:
0
机构:
GOULD INC,RES CTR,ROLLING MEADOWS,IL 60008
NILSSON, B
;
WU, O
论文数:
0
引用数:
0
h-index:
0
机构:
GOULD INC,RES CTR,ROLLING MEADOWS,IL 60008
WU, O
;
SWANSON, AW
论文数:
0
引用数:
0
h-index:
0
机构:
GOULD INC,RES CTR,ROLLING MEADOWS,IL 60008
SWANSON, AW
;
CHEN, DR
论文数:
0
引用数:
0
h-index:
0
机构:
GOULD INC,RES CTR,ROLLING MEADOWS,IL 60008
CHEN, DR
.
JOURNAL OF APPLIED PHYSICS,
1984,
56
(06)
:1851
-1855
←
1
2
→