MEASUREMENT OF INTERFACE STATE CHARGE IN MOS SYSTEM

被引:11
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KOOMEN, J
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10.1016/0038-1101(71)90133-X
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:571 / +
页数:1
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[2]   SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].
BERGLUND, CN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+
[3]   PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].
GARRETT, CGB ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1955, 99 (02) :376-387
[4]   DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J].
GRAY, PV ;
BROWN, DM .
APPLIED PHYSICS LETTERS, 1966, 8 (02) :31-&
[5]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[6]   INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].
GROVE, AS ;
DEAL, BE ;
SNOW, EH ;
SAH, CT .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+
[7]   EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J].
HEIMAN, FP ;
WARFIELD, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) :167-&
[8]  
KERR DR, 1969, JUN C PROP MIS STRUC
[9]  
KUHN M, 1969, MAY EL SOC C NEW YOR
[10]   FIELD EFFECT-CAPACITANCE ANALYSIS OF SURFACE STATES ON SILICON [J].
LEHOVEC, K ;
SLOBODSKOY, A ;
SPRAGUE, JL .
PHYSICA STATUS SOLIDI, 1963, 3 (03) :447-464