DYNAMICS OF CO2-LASER HEATING IN THE PROCESSING OF SILICON

被引：15

作者：

SIREGAR, MRT

LUTHY, W

AFFOLTER, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 10期

关键词：

D O I：

10.1063/1.91334

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：787 / 788

页数：2

共 14 条

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AFFOLTER, K ;

LUTHY, W ;

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APPLIED PHYSICS LETTERS, 1978, 33 (02) :185-187

[2] HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM [J].

CLINE, HE ;

ANTHONY, TR .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3895-3900

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LAFF, RA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2103-2110

[4]

KITTEL C, 1976, INTRO SOLID STATE PH, P228

[5] TEMPERATURE RISE INDUCED BY A LASER-BEAM .2. NON-LINEAR CASE [J].

LAX, M .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :786-788

[6] TEMPERATURE RISE INDUCED BY A LASER-BEAM [J].

LAX, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3919-3924

[7] LASER-INDUCED SURFACE DEFORMATIONS ON SILICON [J].

LUTHY, W ;

AFFOLTER, K ;

FUHRER, M .

PHYSICS LETTERS A, 1979, 72 (01) :60-62

[8] ANNEALING OF PHOSPHORUS-ION-IMPLANTED SILICON USING A CO2-LASER [J].

MIYAO, M ;

OHYU, K ;

TOKUYAMA, T .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :227-229

[9]

Pankove J I, 1971, OPTICAL PROCESSES SE, P93

[10] DETERMINATION OF OPTICAL CONSTANTS AND CARRIER EFFECTIVE MASS OF SEMICONDUCTORS [J].

SPITZER, WG ;

FAN, HY .

PHYSICAL REVIEW, 1957, 106 (05) :882-890

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