INFLUENCE OF MG DOPING ON CUTOFF FREQUENCY AND LIGHT OUTPUT OF INGAASP-LNP HETEROJUNCTION LEDS

被引:11
作者
GROTHE, H
PROEBSTER, W
机构
关键词
D O I
10.1109/T-ED.1981.20348
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:371 / 373
页数:3
相关论文
共 10 条
  • [1] ELECTRON LIFETIME AND DIFFUSION CONSTANT IN GERMANIUM-DOPED GALLIUM-ARSENIDE
    ACKET, GA
    NIJMAN, W
    LAM, HT
    [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3033 - 3040
  • [2] MG-DOPED INGAASP-INP LEDS FOR HIGH-BIT-RATE OPTICAL-COMMUNICATION SYSTEMS
    GROTHE, H
    PROEBSTER, W
    HARTH, W
    [J]. ELECTRONICS LETTERS, 1979, 15 (22) : 702 - 703
  • [3] GROTHE H, 1979, SEP OPT COMM C AMST
  • [4] FREQUENCY-RESPONSE OF GAALAS LIGHT-EMITTING-DIODES
    HARTH, W
    HUBER, W
    HEINEN, J
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) : 478 - 480
  • [5] HARTH W, 1976, AEU-INT J ELECTRON C, V30, P99
  • [6] HIGH-SPEED N-A1GAAS-P-GAAS ELECTROLUMINESCENT DIODES
    HEINEN, J
    HARTH, W
    [J]. ELECTRONICS LETTERS, 1975, 11 (21) : 512 - 513
  • [7] HEINEN J, 1975, 2ND EUR C OPT FIBR C, P277
  • [8] III-V ALLOY HETEROSTRUCTURE HIGH-SPEED AVALANCHE PHOTO-DIODES
    LAW, HD
    NAKANO, K
    TOMASETTA, LR
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) : 549 - 558
  • [9] SELF-ALIGNED STRUCTURE INGAASP-INP DH LASERS
    NISHI, H
    YANO, M
    NISHITANI, Y
    AKITA, Y
    TAKUSAGAWA, M
    [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 232 - 234
  • [10] MATERIAL-SELECTIVE CHEMICAL ETCHING IN THE SYSTEM INGAASP-INP
    PHATAK, SB
    KELNER, G
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 287 - 292