PROSPECTS OF SIGE HETERODEVICES

被引：44

作者：

KASPER, E

机构：

[1] Institut für Halbleitertechnik, Universität Stuttgart, Stuttgart, D-70174

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80074-M

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

State-of-the-art microelectronics is based on silicon integrated circuits with constantly shrinking minimal lateral dimensions. SiGe heterodevices offer compatibility with this silicon technology and also utilization of heterostructure effects. In this review mainly the existing device concepts, the advantages and limits of the SiGe/Si system and the realization of device structures by molecular beam epitaxy are described.

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页码：921 / 925

页数：5

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