JUNCTION LEAKAGE DUE TO COSI2 FORMATION ON AS-DOPED POLYSILICON

被引：4

作者：

GAMBINO, JP

CUNNINGHAM, B

机构：

[1] IBM East Fishkill, New York 12533, Hopewell Junction

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 09期

关键词：

D O I：

10.1149/1.2220880

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Junction leakage has been observed for shallow diodes that simulate emitter-base junctions in npn bipolar transistors, due to CoSi2 formation on As-doped polysilicon. The leakage depends on the Co thickness, the polysilicon thickness, and the device area, but is relatively independent of the Co anneal conditions between 600 and 800-degrees-C. Severe roughness at the CoSi2-polysilicon interface is also observed, especially after annealing at 800-degrees-C. The leakage is probably due to CoSi2 protrusions in the substrate that are produced during the initial silicide formation.

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页码：2654 / 2658

页数：5

相关论文

共 20 条

[1] STUDY OF COBALT-DISILICIDE FORMATION FROM COBALT MONOSILICIDE [J].

APPELBAUM, A ;

KNOELL, RV ;

MURARKA, SP .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1880-1886

[2]

BERGHOLZ W, 1987, SIEMENS FORSCH ENTW, V16, P241

[3] APPLICATION OF SELF-ALIGNED COSI2 INTERCONNECTION IN SUBMICROMETER CMOS TRANSISTORS [J].

BROADBENT, EK ;

IRANI, RF ;

MORGAN, AE ;

MAILLOT, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) :2440-2446

[4] PRECIPITATION-INDUCED CURRENTS AND GENERATION-RECOMBINATION CURRENTS IN INTENTIONALLY CONTAMINATED SILICON P+N JUNCTIONS [J].

BUSTA, HH ;

WAGGENER, HA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) :1424-1429

[5]

El-Diwany M., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P245, DOI 10.1109/IEDM.1989.74271

[6] PTSI-INDUCED JUNCTION LEAKAGE [J].

GAMBINO, JP ;

MONKOWSKI, MD ;

TSANG, PJ ;

SHEPARD, JF ;

RANSOM, CM ;

WONG, CY .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (07) :2063-2067

[7]

GAMBINO JP, 1992, ELECTROCHEMICAL SOC, V926, P264

[8] SHALLOW JUNCTIONS BY OUT-DIFFUSION FROM ARSENIC IMPLANTED POLYCRYSTALLINE SILICON [J].

GEORGIOU, GE ;

SHENG, TT ;

BAIOCCHI, FA ;

KOVALCHICK, J ;

LYNCH, WT ;

MALM, D .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) :3714-3722

[9]

HILLENIUS SJ, 1989, ELECTROCHEMICAL SOC, V891

[10] COMPARISON OF TRANSFORMATION TO LOW-RESISTIVITY PHASE AND AGGLOMERATION OF TISI2 AND COSI2 [J].

LASKY, JB ;

NAKOS, JS ;

CAIN, OJ ;

GEISS, PJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (02) :262-269