PTSI-INDUCED JUNCTION LEAKAGE

被引：5

作者：

GAMBINO, JP ^{[1
]}

MONKOWSKI, MD ^{[1
]}

TSANG, PJ ^{[1
]}

SHEPARD, JF ^{[1
]}

RANSOM, CM ^{[1
]}

WONG, CY ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 07期

关键词：

D O I：

10.1149/1.2097168

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2063 / 2067

页数：5

共 22 条

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