ENHANCED GRAIN-GROWTH OF PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON BY TITANIUM SILICIDE FORMATION

被引：17

作者：

CHOU, TC

WONG, CY

TU, KN

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 20期

关键词：

D O I：

10.1063/1.97331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1381 / 1383

页数：3

共 17 条

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[7] COMPENSATION OF GRAIN-GROWTH ENHANCEMENT IN DOPED SILICON FILMS [J].

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[8]

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