APPLICATION OF SELF-ALIGNED COSI2 INTERCONNECTION IN SUBMICROMETER CMOS TRANSISTORS

[1] BROADBENT EK, 1987, IEEE ELECTRON DEVICE, V6, P318

[2] GUTAI L, IN PRESS

[3] APPLICATION OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS TO VERY LARGE-SCALE INTEGRATED N-METAL-OXIDE-SEMICONDUCTOR AND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06): : 1657 - 1663

[4] Hillenius S. J., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P252

[5] HSU ST, 1983, RCA REV, V44, P424

[6] LUCCHESE CJ, 1982, VLSI SCI TECHNOLOGY, P232

[7] CHARACTERIZATION OF A SELF-ALIGNED COBALT SILICIDE PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) : 925 - 935

[8] SELF-ALIGNED COBALT DISILICIDE FOR GATE AND INTERCONNECTION AND CONTACTS TO SHALLOW JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (10) : 2108 - 2115

[9] DIRECT SILICIDATION OF CO ON SI BY RAPID THERMAL ANNEALING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (03) : 548 - 553

[10] TAUR Y, 1987, IEEE T ELECTRON DEV, V34, P575

[1] BROADBENT EK, 1987, IEEE ELECTRON DEVICE, V6, P318

[2] GUTAI L, IN PRESS

[3] APPLICATION OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS TO VERY LARGE-SCALE INTEGRATED N-METAL-OXIDE-SEMICONDUCTOR AND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06): : 1657 - 1663

[4] Hillenius S. J., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P252

[5] HSU ST, 1983, RCA REV, V44, P424

[6] LUCCHESE CJ, 1982, VLSI SCI TECHNOLOGY, P232

[7] CHARACTERIZATION OF A SELF-ALIGNED COBALT SILICIDE PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) : 925 - 935

[8] SELF-ALIGNED COBALT DISILICIDE FOR GATE AND INTERCONNECTION AND CONTACTS TO SHALLOW JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (10) : 2108 - 2115

[9] DIRECT SILICIDATION OF CO ON SI BY RAPID THERMAL ANNEALING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (03) : 548 - 553

[10] TAUR Y, 1987, IEEE T ELECTRON DEV, V34, P575