DIRECT SILICIDATION OF CO ON SI BY RAPID THERMAL ANNEALING

被引：34

作者：

TABASKY, M ^{[1
]}

BULAT, ES ^{[1
]}

DITCHEK, BM ^{[1
]}

SULLIVAN, MA ^{[1
]}

SHATAS, SC ^{[1
]}

机构：

[1] PEAK SYST INC, TECHNOL, FREMONT, CA 94538 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 03期

关键词：

D O I：

10.1109/T-ED.1987.22962

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：548 / 553

页数：6

相关论文

共 11 条

[1] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS
ALPERIN, ME
HOLLAWAY, TC
HAKEN, RA
GOSMEYER, CD
KARNAUGH, RV
PARMANTIE, WD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 141 - 149
[2] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
BEAN, JC
POATE, JM
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646
[3] CONTROL OF TITANIUM-SILICON AND SILICON DIOXIDE REACTIONS BY LOW-TEMPERATURE RAPID THERMAL ANNEALING
BRILLSON, LJ
SLADE, ML
RICHTER, HW
VANDERPLAS, H
FULKS, RT
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1080 - 1082
[4] COBALT DISILICIDE - CRYSTAL-GROWTH AND PHYSICAL-PROPERTIES
DITCHEK, BM
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) : 207 - 210
[5] ELECTRICAL TRANSPORT-PROPERTIES OF COSI2 AND NISI2 THIN-FILMS
HENSEL, JC
TUNG, RT
POATE, JM
UNTERWALD, FC
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 913 - 915
[6] TRANSISTOR ACTION IN SI/COSI2/SI HETEROSTRUCTURES
HENSEL, JC
LEVI, AFJ
TUNG, RT
GIBSON, JM
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 151 - 153
[7] LIEN CD, 1984, SEP P WORKSH REFR ME
[8] Murarka S. P., 1983, SILICIDES VLSI APPL, V1, P5
[9] MURARKA SP, 1983, SILICIDES VLSI APPLI, P93
[10] Nicolet MA, 1983, VLSI ELECTRONICS MIC, V6, P330