THE APPLICATION OF THE (N,ALPHA) METHOD FOR BORON DEPTH PROFILING AND CHANNELING BLOCKING MEASUREMENTS IN SEMICONDUCTOR-MATERIALS

被引：10

作者：

MULLER, K

HENKELMANN, R

JAHNEL, F

RYSSEL, H

HABERGER, K

FINCK, D

BIERSACK, J

机构：

[1] HAHN MEITNER INST KERNFORSCH BERLIN GMBH,D-1000 BERLIN 39,FED REP GER

[2] INST FESTKORPERTECHNOL,MUNCHEN,FED REP GER

来源：

NUCLEAR INSTRUMENTS & METHODS | 1980年 / 170卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(80)91002-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：151 / 155

页数：5

共 17 条

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[10] DETERMINATION OF LOW-DOSE BORON IMPLANTED CONCENTRATION PROFILES IN SILICON BY (N,ALPHA) REACTION [J].

MULLER, K ;

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