EFFECT OF THERMAL ETCHING ON SILICON EPITAXIAL-GROWTH BY VACUUM SUBLIMATION

被引：9

作者：

KIMURA, A

LEE, CA

机构：

[1] IBM JAPAN,YASU,JAPAN

[2] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14850

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 10期

关键词：

D O I：

10.1016/0038-1101(75)90018-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：901 / &

共 18 条

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[7] INFLUENCE OF SUBSTRATE SURFACE CONDITIONS ON NUCLEATION AND GROWTH OF EPITAXIAL SILICON FILMS [J].

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[8] SOME ASPECTS OF SURFACE BEHAVIOR OF SILICON [J].

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[9]

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[10] TIME DEPENDENCE OF AVALANCHE PROCESSES IN SILICON [J].

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