NATURE OF KINK IN CARRIER PROFILE FOR PHOSPHORUS-DIFFUSED LAYERS IN SILICON

被引：47

作者：

SCHWETTMANN, FN

KENDALL, DL

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 01期

关键词：

D O I：

10.1063/1.1654200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2 / +

页数：1

共 19 条

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[2]

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[9] EFFECT OF EXTREMELY THIN NITROGENOUS SURFACE FILMS ON PHOSPHORUS-IMPURITY PROFILES IN SILICON [J].

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IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1971, 15 (02) :132-&

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