ADVANCED TRANSPARENT CONDUCTIVE OXIDE ELECTRODE FOR OPTOELECTRONIC THIN-FILM DEVICES

被引：5

作者：

HOHEISEL, M

HELLER, S

MROTZEK, C

MITWALSKY, A

机构：

[1] Siemens AG, Corporate Research and Development, D-8000 München 83

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 76卷 / 01期

关键词：

D O I：

10.1016/0038-1098(90)90286-K

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electrodes for optoelectronic thin-film devices must be conductive, optically transparent, and structurable by etching. The indium-tin-oxide (ITO) currently used fails to meet all these requirements. A new deposition sequence for ITO is therefore proposed. ITO films are grown reactively by magnetron sputtering from an indium/tin target. During the process, the oxygen partial pressure is varied periodically. We investigated the microstructure of these films by cross-sectional transmission electron microscopy (TEM) and show results of conductivity, optical absorption and etching behavior. © 1990.

引用

页码：1 / 4

页数：4

共 11 条

[1]

AST DG, 1984, SEMICONDUCTORS SEM D, V21

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