RELAXATION PHENOMENA OF IMAGE SENSORS MADE FROM A-SI-H

被引：6

作者：

HOHEISEL, M

BRUTSCHER, N

WIECZOREK, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.343944

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4466 / 4473

页数：8

共 20 条

[1] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[2] FREQUENCY AND TEMPERATURE-DEPENDENCE OF THE SPACE-CHARGE CAPACITANCE IN A-SI-H FILMS [J].

GLADE, A ;

FUHS, W ;

MELL, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :269-272

[3] TEMPERATURE-DEPENDENT CREATION OF LIGHT-INDUCED DEFECTS IN A-SI-H SCHOTTKY-BARRIER DIODES [J].

GLADE, A ;

BEICHLER, J ;

MELL, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :397-400

[4]

GLADE A, 1987, THESIS MARBURG

[5] PHYSICAL ASPECTS OF A-SI-H IMAGE SENSORS [J].

HOHEISEL, M ;

BRUNST, G ;

WIECZOREK, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 90 (1-3) :243-246

[6] THE INTERFACES A-SI-H/PD AND A-SI-H ITO - STRUCTURE AND ELECTRONIC-PROPERTIES [J].

HOHEISEL, M ;

BRUTSCHER, N ;

OPPOLZER, H ;

SCHILD, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :959-962

[7] SCHOTTKY BARRIERS ON PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON - THE EFFECTS OF TUNNELING [J].

JACKSON, WB ;

NEMANICH, RJ ;

THOMPSON, MJ ;

WACKER, B .

PHYSICAL REVIEW B, 1986, 33 (10) :6936-6945

[8] LIGHT-INDUCED EFFECTS IN SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS-SILICON [J].

JOUSSE, D ;

BASSET, R ;

DELIONIBUS, S ;

BOURDON, B .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :208-211

[9]

Kempter K., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V617, P120, DOI 10.1117/12.961081

[10] A-SI-H GAP STATES INVESTIGATED BY CPM AND SCLC [J].

KOCKA, J ;

VANECEK, M ;

SCHAUER, F .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :715-722

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