QUANTITATIVE AES AND RBS DEPTH PROFILES OF TITANIUM SILICIDE FILMS ON GAAS AFTER ANNEALING

被引：4

作者：

CLEMENT, M ^{[1
]}

SANZ, JM ^{[1
]}

MARTINEZDUART, JM ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID,CSIC,INST CIENCIA MAT B,E-28049 MADRID,SPAIN

来源：

SURFACE AND INTERFACE ANALYSIS | 1989年 / 14卷 / 6-7期

关键词：

D O I：

10.1002/sia.740140620

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：413 / 418

页数：6

相关论文

共 22 条

[1] BETZ G, 1983, SPUTTERING PARTICLE, V2, pCH2
[2] A COMPARISON OF AES AND RBS ANALYSIS OF THE COMPOSITION OF REACTIVELY SPUTTERED TISIX FILMS
BLOM, HO
STRIDH, B
BERG, S
SUNDGREN, JE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 497 - 499
[3] CHARACTERIZATION OF TITANIUM SILICIDE FILMS FORMED BY COMPOSITE SPUTTERING AND RAPID THERMAL ANNEALING
BROADBENT, EK
MORGAN, AE
COULMAN, B
HUANG, IW
KUIPER, AET
[J]. THIN SOLID FILMS, 1987, 151 (01) : 51 - 63
[4] QUANTITATIVE AES ANALYSIS OF TI SILICIDE AND CO SILICIDE FILMS
CHEN, WD
BENDER, H
VANDERVORST, W
MAES, HE
[J]. SURFACE AND INTERFACE ANALYSIS, 1988, 12 (1-12) : 151 - 155
[5] RBS AND AES DEPTH PROFILES OF PD DEPOSITED ON SI AFTER ANNEALING AT DIFFERENT TEMPERATURES
CLEMENT, M
SANZ, JM
CLIMENT, A
MARTINEZDUART, JM
[J]. SURFACE AND INTERFACE ANALYSIS, 1988, 12 (1-12) : 334 - 338
[6] CLEMENT M, IN PRESS VACUUM
[7] DAVIS LE, 1976, HDB AUGER ELECTRON S
[8] ALGORITHMS FOR THE RAPID SIMULATION OF RUTHERFORD BACKSCATTERING SPECTRA
DOOLITTLE, LR
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 9 (03) : 344 - 351
[9] BORON, PHOSPHORUS, AND ARSENIC DIFFUSION IN TISI2
GAS, P
DELINE, V
DHEURLE, FM
MICHEL, A
SCILLA, G
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1634 - 1639
[10] HOFFMAN S, 1984, THIN FILM DEPTH PROF, pCH7