CHARACTERIZATION OF TITANIUM SILICIDE FILMS FORMED BY COMPOSITE SPUTTERING AND RAPID THERMAL ANNEALING

Titanium silicide films were prepared by sputtering from a single composite TiSi//x source followed by rapid thermal annealing in N//2. The composition, resistivity, crystal structure and microstructure were investigated using Auger electron spectroscopy, Rutherford backscattering spectrometry, scanning and transmission electron microscopy, X-ray and electron diffraction and a four-point resistivity probe. As-deposited and fully annealed films were found to possess a TiSi//2//. //2 stoichiometry and to contain 6-7 at. % O and significant amounts of several metallic impurities (copper, iron and tungsten). Rapid thermal annealing at 850-1000 degree C for 10 s forms a polycrystalline equilibrium orthorhombic phase TiSi//2 structure with 0. 25-0. 50 mu m grains.