MATERIAL CHARACTERIZATION OF PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED TITANIUM SILICIDE

被引：19

作者：

MORGAN, AE ^{[1
]}

STACY, WT ^{[1
]}

DEBLASI, JM ^{[1
]}

CHEN, TYJ ^{[1
]}

机构：

[1] SIGNET CORP,SUNNYVALE,CA 94086

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.583563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：723 / 731

页数：9

共 31 条

[1] PROPERTIES OF SIO2 GROWN ON TI, CO, NI, PD, AND PT SILICIDES [J].

BARTUR, M ;

NICOLET, MA .

JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) :81-94

[2] THERMODYNAMIC CONSIDERATIONS IN REFRACTORY METAL-SILICON-OXYGEN SYSTEMS [J].

BEYERS, R .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (01) :147-152

[3] METASTABLE PHASE FORMATION IN TITANIUM-SILICON THIN-FILMS [J].

BEYERS, R ;

SINCLAIR, R .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5240-5245

[4]

BEYERS R, 1984, MAT RES SOC S P, V25, P601

[5] TITANIUM SILICIDE FILMS PREPARED BY REACTIVE SPUTTERING [J].

BLOM, HO ;

BERG, S ;

OSTLING, M ;

PETERSSON, CS ;

DELINE, V ;

DHEURLE, FM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :997-1003

[6] OXIDATION MECHANISMS IN TISI2 FILMS ON SINGLE SILICON SUBSTRATES [J].

CHEN, JR ;

HOUNG, MP ;

HSIUNG, SK ;

LIU, YC .

APPLIED PHYSICS LETTERS, 1980, 37 (09) :824-826

[7] INVESTIGATION ON TISI2 THIN-FILM OXIDATION BY RADIOACTIVE-TRACER TECHNIQUE [J].

CHEN, JR ;

LIU, YC ;

CHU, SD .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :263-265

[8] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J].

CHOW, TP ;

STECKL, AJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1480-1497

[9] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].

CROWDER, BL ;

ZIRINSKY, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :369-371

[10] OXIDATION OF SILICIDE THIN-FILMS - TISI2 [J].

DHEURLE, F ;

IRENE, EA ;

TING, CY .

APPLIED PHYSICS LETTERS, 1983, 42 (04) :361-363

← 1 2 3 4 →