TITANIUM SILICIDE FILMS PREPARED BY REACTIVE SPUTTERING

被引：6

作者：

BLOM, HO

BERG, S

OSTLING, M

PETERSSON, CS

DELINE, V

DHEURLE, FM

机构：

[1] ROYAL INST TECHNOL,INST MICROWAVE TECHNOL,S-10044 STOCKHOLM 70,SWEDEN

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.583029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：997 / 1003

页数：7

共 24 条

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[2] STOICHIOMETRY DETERMINATION OF REACTIVELY SPUTTERED TITANIUM-SILICIDE [J].

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[3]

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TING, CY .

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[6]

DHEURLE FM, UNPUB

[7]

DHEURLE FM, 1982, VLSI SCI TECHNOLOGY, P194

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HARDING, GL .

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[9] KINETICS OF TISI2 FORMATION BY THIN TI FILMS ON SI [J].

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NICOLET, MA .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5076-5080

[10] CRYSTALLIZATION AND RESISTIVITY OF AMORPHOUS TITANIUM SILICIDE FILMS DEPOSITED BY CO-EVAPORATION [J].

KEMPER, MJH ;

OOSTING, PH .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6214-6219

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