HYDROGEN PLASMA PROCESSING OF GAAS AND ALGAAS

被引：10

作者：

CHOQUETTE, KD ^{[1
]}

FREUND, RS ^{[1
]}

HONG, M ^{[1
]}

LUFTMAN, HS ^{[1
]}

CHU, SNG ^{[1
]}

MANNAERTS, JP ^{[1
]}

WETZEL, RC ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 06期

关键词：

D O I：

10.1116/1.586538

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogen plasma processing of GaAs and AlGaAs using an electron cyclotron resonance plasma reactor, which is vacuum-linked to a molecular-beam epitaxial (MBE) growth chamber is reported. Native oxide removal and surface cleaning of GaAs is characterized using hydrogen plasma processing, subsequent thermal Cl2 etching, and vacuum annealing. It is shown that surface reconstruction and excellent GaAs/GaAs interfaces can be achieved using these dry vacuum procedures. It is also shown that AlxGa1-xAs native oxides can be removed for 0 less-than-or-equal-to x less-than-or-equal-to 1 using hydrogen plasma processing before MBE overgrowth. The best AlGaAs/AlGaAs interfaces are obtained using low microwave power during hydrogen plasma processing. 0 and C impurities detected at these interfaces increase with higher Al composition; Si interface impurities tend to increase with higher microwave power. In general, hydrogen plasma processing is judged effective for surface preparation before MBE growth for the complete range of AlGaAs alloys.

引用

页码：2025 / 2032

页数：8

共 27 条

[1] DAMAGE AND CONTAMINATION-FREE GAAS AND ALGAAS ETCHING USING A NOVEL ULTRAHIGH-VACUUM REACTIVE ION-BEAM ETCHING SYSTEM WITH ETCHED SURFACE MONITORING AND CLEANING METHOD [J].