ULTRAFAST ENERGY-LOSS OF ELECTRONS IN P-GAAS

被引：15

作者：

RODRIGUESHERZOG, R ^{[1
]}

SAILER, M ^{[1
]}

HECKER, NE ^{[1
]}

HOPFEL, RA ^{[1
]}

NINTUNZE, N ^{[1
]}

OSMAN, MA ^{[1
]}

机构：

[1] WASHINGTON STATE UNIV, DEPT ELECT ENGN & COMP SCI, PULLMAN, WA 99164 USA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 02期

关键词：

D O I：

10.1063/1.114777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the ultrafast energy relaxation of photoexcited minority electrons in highly doped p-GaAs by means of femtosecond time resolved luminescence (Δt<90 fs). Our experiments allow the first observation of the extremely fast cooling of minority electrons within the Γ-valley. The electron mean energy decreases within 150 fs from 150 meV down to less than 50 meV. The total energy loss rate reaches values higher than 10-7 W per electron, representing the highest energy loss rates of electrons observed to date in monocrystalline semiconductors. Ensemble Monte Carlo simulations show that the electron-hole scattering is responsible for these high energy loss rates.© 1995 American Institute of Physics.

引用

页码：264 / 266

页数：3

共 14 条

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