PHOTOEMISSION-STUDY OF OXYGEN-ADSORPTION ON (001) SILICON-CARBIDE SURFACES

[31] Palmour J. W., 1986, MATER RES SOC S P, V54, P553

[32] DOPANT REDISTRIBUTION DURING THERMAL-OXIDATION OF MONOCRYSTALLINE BETA-SIC THIN-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (02) : 502 - 507

[33] SURFACE AND BULK VALENCE BAND PHOTOEMISSION OF SILICON-CARBIDE [J]. SOLID STATE COMMUNICATIONS, 1987, 63 (03) : 231 - 235

[34] PARRILL TM, 1988, THESIS NW U

[35] OXYGEN-2S SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1989, 39 (03): : 1595 - 1601

[36] ORIENTATION DEPENDENT ADSORPTION ON A CYLINDRICAL SILICON CRYSTAL .2. OXYGEN [J]. SURFACE SCIENCE, 1985, 157 (2-3) : 353 - 370

[37] SMOOTHING + DIFFERENTIATION OF DATA BY SIMPLIFIED LEAST SQUARES PROCEDURES [J]. ANALYTICAL CHEMISTRY, 1964, 36 (08) : 1627 - &

[38] METAL-OXIDE-SEMICONDUCTOR CHARACTERISTICS OF CHEMICAL VAPOR-DEPOSITED CUBIC-SIC [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11): : L862 - L864

[39] SMOOTHING AND DIFFERENTIATION OF DATA BY SIMPLIFIED LEAST SQUARE PROCEDURE [J]. ANALYTICAL CHEMISTRY, 1972, 44 (11) : 1906 - &

[40] AUGER-ELECTRON SPECTROSCOPY ANALYSIS OF THERMAL OXIDE LAYERS OF SILICON-CARBIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) : 1896 - 1897

[31] Palmour J. W., 1986, MATER RES SOC S P, V54, P553

[32] DOPANT REDISTRIBUTION DURING THERMAL-OXIDATION OF MONOCRYSTALLINE BETA-SIC THIN-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (02) : 502 - 507

[33] SURFACE AND BULK VALENCE BAND PHOTOEMISSION OF SILICON-CARBIDE [J]. SOLID STATE COMMUNICATIONS, 1987, 63 (03) : 231 - 235

[34] PARRILL TM, 1988, THESIS NW U

[35] OXYGEN-2S SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1989, 39 (03): : 1595 - 1601

[36] ORIENTATION DEPENDENT ADSORPTION ON A CYLINDRICAL SILICON CRYSTAL .2. OXYGEN [J]. SURFACE SCIENCE, 1985, 157 (2-3) : 353 - 370

[37] SMOOTHING + DIFFERENTIATION OF DATA BY SIMPLIFIED LEAST SQUARES PROCEDURES [J]. ANALYTICAL CHEMISTRY, 1964, 36 (08) : 1627 - &

[38] METAL-OXIDE-SEMICONDUCTOR CHARACTERISTICS OF CHEMICAL VAPOR-DEPOSITED CUBIC-SIC [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11): : L862 - L864

[39] SMOOTHING AND DIFFERENTIATION OF DATA BY SIMPLIFIED LEAST SQUARE PROCEDURE [J]. ANALYTICAL CHEMISTRY, 1972, 44 (11) : 1906 - &

[40] AUGER-ELECTRON SPECTROSCOPY ANALYSIS OF THERMAL OXIDE LAYERS OF SILICON-CARBIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) : 1896 - 1897