LASER-ANNEALING BEHAVIOR OF A PHOSPHORUS-IMPLANTED SILICON SUBSTRATE COVERED WITH A SIO2 FILM

被引：15

作者：

TAMURA, H

MIYAO, M

TOKUYAMA, T

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 05期

关键词：

D O I：

10.1063/1.326296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Laser-annealing behavior of phosphorus-implanted silicon substrates is investigated as a function of the SiO2 film thickness formed on implanted surfaces. Surface-carrier concentration after laser irradiation through the SiO2 layers shows periodic enhancement in relation to SiO2 thickness. Calculation of laser energy transferred into the silicon surface through various SiO2 film thicknesses is carried out and the results agree well with the experiments.

引用

页码：3783 / 3784

页数：2

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