PERIODIC SUBMICROMETER DOT STRUCTURES ON N-GAAS SUBSTRATES FABRICATED BY LASER-INDUCED SURFACE ELECTROMAGNETIC-WAVE ETCHING

被引：12

作者：

KUMAGAI, H ^{[1
]}

EZAKI, M ^{[1
]}

TOYODA, K ^{[1
]}

OBARA, M ^{[1
]}

机构：

[1] KEIO UNIV,DEPT ELECT ENGN,KOHOKU KU,YOKOHAMA,KANAGAWA 223,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 04期

关键词：

D O I：

10.1063/1.353161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Periodic submicrometer dot structures were fabricated by laser-induced surface electromagnetic wave (SEW) etching of n-GaAs substrates using the holographic exposure system of the frequency-tripled Nd:YAG laser. The shorter and longer diameters were about 310 and 540 nm, respectively. Spatial periods along two perpendicular axes were 370 and 545 nm, respectively. These periods were nearly in agreement with the calculation. The period of SEW grating depended on not only the laser wavelength, but also the number density of the laser-induced quasifree carriers.

引用

页码：1971 / 1974

页数：4

共 18 条

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