BALLISTIC-ELECTRON-EMISSION MICROSCOPY CHARACTERISTICS OF REVERSE-BIASED SCHOTTKY DIODES

被引：13

作者：

DAVIES, A

CRAIGHEAD, HG

机构：

[1] School of Applied and Engineering Physics, Cornell University, Ithaca

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 21期

关键词：

D O I：

10.1063/1.111440

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ballistic-electron-emission microscopy (BEEM) is used to study Au/Si Schottky diodes under reverse-bias conditions. The reverse bias causes a reduction in the barrier height and an increase in the collection efficiency of the electron transport. The former phenomenon is well described by the effects of the image potential. The increase in collection efficiency is likely due to a reduction in the percentage of backscattered electrons as the field strength in the semiconductor is increased. The analysis further indicates that this back scattering is a significant energy dependent process that is absent from the accepted BEEM transport model.

引用

收藏

页码：2833 / 2835

页数：3

相关论文

共 18 条

[1] OBSERVATION OF INTERFACE BAND-STRUCTURE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY [J].

BELL, LD ;

KAISER, WJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (20) :2368-2371

[2] QUANTUM-MECHANICAL REFLECTION OF ELECTRONS AT METAL-SEMICONDUCTOR BARRIERS - ELECTRON TRANSPORT IN SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES [J].

CROWELL, CR ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2683-&

[3] ELECTRON-OPTICAL-PHONON SCATTERING IN EMITTER AND COLLECTOR BARRIERS OF SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1965, 8 (12) :979-&

[4] BALLISTIC ELECTRON-EMISSION MICROSCOPY OF LATERALLY PATTERNED MICROSTRUCTURES [J].

DAVIES, A ;

COUILLARD, JG ;

CRAIGHEAD, HG .

APPLIED PHYSICS LETTERS, 1992, 61 (09) :1040-1042

[5] BALLISTIC ELECTRON-EMISSION MICROSCOPY STUDIES OF THE NISI2 SI(111) INTERFACE [J].

FERNANDEZ, A ;

HALLEN, HD ;

HUANG, T ;

BUHRMAN, RA ;

SILCOX, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :590-593

[6]

HALLEN HD, 1991, THESIS CORNELL U

[7]

HUANG T, COMMUNICATION

[8] DIRECT INVESTIGATION OF SUBSURFACE INTERFACE ELECTRONIC-STRUCTURE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY [J].

KAISER, WJ ;

BELL, LD .

PHYSICAL REVIEW LETTERS, 1988, 60 (14) :1406-1409

[9] BALLISTIC ELECTRON-EMISSION MICROSCOPY AND SPECTROSCOPY OF AU/GAAS INTERFACES [J].

KAISER, WJ ;

BELL, LD ;

HECHT, MH ;

GRUNTHANER, FJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :945-949

[10] BALLISTIC-CARRIER SPECTROSCOPY OF THE COSI2/SI INTERFACE [J].

KAISER, WJ ;

HECHT, MH ;

FATHAUER, RW ;

BELL, LD ;

LEE, EY ;

DAVIS, LC .

PHYSICAL REVIEW B, 1991, 44 (12) :6546-6549