BALLISTIC-CARRIER SPECTROSCOPY OF THE COSI2/SI INTERFACE

被引：39

作者：

KAISER, WJ

HECHT, MH

FATHAUER, RW

BELL, LD

LEE, EY

DAVIS, LC

机构：

[1] RENSSELAER POLYTECH INST,DEPT PHYS,TROY,NY 12180

[2] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180

[3] FORD MOTOR CO,SCI RES STAFF,DEARBORN,MI 48121

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.44.6546

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ballistic-electron-emission microscopy and related ballistic-hole and carrier-scattering spectroscopies have been used to investigate carrier transport in the expitaxial CoSi2/Si system. An unexpected degree of variation in interface transmission is observed despite the high crystal quality of the epitaxial silicide layer. Furthermore, clear evidence of the CoSi2 band structure is observed, which has a dramatic effect on interface transport. The major effect of the silicide band structure is to increase the interfacial barrier to electron transmission to a value in excess of the Schottky barrier height.

引用

收藏

页码：6546 / 6549

页数：4

相关论文

共 16 条

[1] DIRECT SPECTROSCOPY OF ELECTRON AND HOLE SCATTERING [J].

BELL, LD ;

HECHT, MH ;

KAISER, WJ ;

DAVIS, LC .

PHYSICAL REVIEW LETTERS, 1990, 64 (22) :2679-2682

[2] OBSERVATION OF INTERFACE BAND-STRUCTURE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY [J].

BELL, LD ;

KAISER, WJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (20) :2368-2371

[3] EVIDENCE FOR FERMI-ENERGY PINNING RELATIVE TO EITHER VALENCE OR CONDUCTION-BAND IN SCHOTTKY BARRIERS [J].

DUBOZ, JY ;

BADOZ, PA ;

DAVITAVA, FA ;

ROSENCHER, E .

PHYSICAL REVIEW B, 1989, 40 (15) :10607-10610

[4] HYDROGEN-TERMINATED SILICON SUBSTRATES FOR LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY [J].

GRUNTHANER, PJ ;

GRUNTHANER, FJ ;

FATHAUER, RW ;

LIN, TL ;

HECHT, MH ;

BELL, LD ;

KAISER, WJ ;

SCHOWENGERDT, FD ;

MAZUR, JH .

THIN SOLID FILMS, 1989, 183 :197-212

[5] BALLISTIC-HOLE SPECTROSCOPY OF INTERFACES [J].

HECHT, MH ;

BELL, LD ;

KAISER, WJ ;

DAVIS, LC .

PHYSICAL REVIEW B, 1990, 42 (12) :7663-7666

[6] BALLISTIC-ELECTRON-EMISSION MICROSCOPY INVESTIGATION OF SCHOTTKY-BARRIER INTERFACE FORMATION [J].

HECHT, MH ;

BELL, LD ;

KAISER, WJ ;

GRUNTHANER, FJ .

APPLIED PHYSICS LETTERS, 1989, 55 (08) :780-782

[7]

HEINE V, 1965, PHYS REV, V138, pA1649

[8] TRANSISTOR ACTION IN SI/COSI2/SI HETEROSTRUCTURES [J].

HENSEL, JC ;

LEVI, AFJ ;

TUNG, RT ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :151-153

[9] SPE-COSI2 SUBMICROMETER LINES BY LIFT-OFF USING SELECTIVE REACTION AND ITS APPLICATION TO A PERMEABLE-BASE TRANSISTOR [J].

ISHIBASHI, K ;

FURUKAWA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (03) :322-327

[10] RELIABLE AND VERSATILE SCANNING TUNNELING MICROSCOPE [J].

KAISER, WJ ;

JAKLEVIC, RC .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1988, 59 (04) :537-540