BALLISTIC-CARRIER SPECTROSCOPY OF THE COSI2/SI INTERFACE

Ballistic-electron-emission microscopy and related ballistic-hole and carrier-scattering spectroscopies have been used to investigate carrier transport in the expitaxial CoSi2/Si system. An unexpected degree of variation in interface transmission is observed despite the high crystal quality of the epitaxial silicide layer. Furthermore, clear evidence of the CoSi2 band structure is observed, which has a dramatic effect on interface transport. The major effect of the silicide band structure is to increase the interfacial barrier to electron transmission to a value in excess of the Schottky barrier height.