INSITU RADIATION TOLERANCE-TESTS OF MOS RAMS

被引：3

作者：

SCHLENTHER, M ^{[1
]}

BRAEUNIG, D ^{[1
]}

GAERTNER, M ^{[1
]}

GLIEM, F ^{[1
]}

机构：

[1] HAHN MEITNER INST KERNFORSCH BERLIN GMBH,DEPT D,D-1000 BERLIN 39,FED REP GER

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/TNS.1978.4329515

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1209 / 1215

页数：7

共 17 条

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[8] ESTABLISHMENT OF A RADIATION HARDENED CMOS MANUFACTURING PROCESS [J].

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[9] RADIATION TESTING COMPLEMENTARY (SYMMETRY) METAL-OXIDE SEMICONDUCTOR (CMOS) ARRAYS FOR SATELLITES [J].

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[10] RADIATION EFFECTS ON COMMERCIAL 4-KILOBIT NMOS MEMORIES [J].

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