ANALYSIS OF THE NEAR-INTRINSIC AND EXTRINSIC PHOTOCAPACITANCE DUE TO THE EL2 LEVEL IN BORON IMPLANTED GAAS

被引：7

作者：

MORANTE, JR ^{[1
]}

SAMITIER, J ^{[1
]}

PEREZ, A ^{[1
]}

ALTELARREA, H ^{[1
]}

GOURRIER, S ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.337255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1661 / 1669

页数：9

共 19 条

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[6]

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BONNAFE, J .

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[8] NATIVE HOLE TRAP IN BULK GAAS AND ITS ASSOCIATION WITH THE DOUBLE-CHARGE STATE OF THE ARSENIC ANTISITE DEFECT [J].

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[9] CHARGE-STATE-CONTROLLED STRUCTURAL RELAXATION OF THE EL2 CENTER IN GAAS [J].

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[10]

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