MICROWAVE PERFORMANCE OF PSEUDOMORPHIC RESONANT-TUNNELING HOT-ELECTRON TRANSISTORS AT 77K

被引:3
作者
IMAURUA, K
MORI, T
OHNISHI, H
MUTO, S
YOKOYAMA, N
机构
关键词
D O I
10.1049/el:19890025
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:34 / 35
页数:2
相关论文
共 3 条
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[2]   FLIP-FLOP CIRCUIT USING A RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR (RHET) [J].
YOKOYAMA, N ;
IMAMURA, K .
ELECTRONICS LETTERS, 1986, 22 (23) :1228-1229
[3]   A NEW FUNCTIONAL, RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR (RHET) [J].
YOKOYAMA, N ;
IMAMURA, K ;
MUTO, S ;
HIYAMIZU, S ;
NISHI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (11) :L853-L853