ULTRAVIOLET PHOTOEMISSION-STUDIES OF GAAS(100) SURFACES CHEMICALLY STABILIZED BY H2S TREATMENTS

被引：81

作者：

TIEDJE, T ^{[1
]}

COLBOW, KM ^{[1
]}

ROGERS, D ^{[1
]}

FU, Z ^{[1
]}

EBERHARDT, W ^{[1
]}

机构：

[1] EXXON RES & ENGN CO,ANNANDALE,NJ 08801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：837 / 840

页数：4

共 12 条

[1] EFFECTS OF NA2S AND (NH4)2S EDGE PASSIVATION TREATMENTS ON THE DARK CURRENT-VOLTAGE CHARACTERISTICS OF GAASPN DIODES [J].

CARPENTER, MS ;

MELLOCH, MR ;

LUNDSTROM, MS ;

TOBIN, SP .

APPLIED PHYSICS LETTERS, 1988, 52 (25) :2157-2159

[2] SURFACE-MORPHOLOGY OF EPITAXIAL CAF2 FILMS ON GAAS (100) [J].

HOFFMAN, RA ;

SINHAROY, S ;

FARROW, RFC .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1068-1070

[3] CORE-LEVEL PHOTOEMISSION-STUDIES OF MBE-GROWN SEMICONDUCTOR SURFACES [J].

LUDEKE, R ;

CHIANG, TC ;

EASTMAN, DE .

PHYSICA B & C, 1983, 117 (MAR) :819-821

[4] EFFECTS OF H2S ADSORPTION ON SURFACE-PROPERTIES OF GAAS (100) GROWN INSITU BY MBE [J].

MASSIES, J ;

DEZALY, F ;

LINH, NT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1134-1140

[5] MONO-CRYSTALLINE ALUMINUM OHMIC CONTACT TO N-GAAS BY H2S ADSORPTION [J].

MASSIES, J ;

CHAPLART, J ;

LAVIRON, M ;

LINH, NT .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :693-695

[6] ORIENTATION-DEPENDENT SURFACE CORE-LEVEL SHIFTS AND CHEMICAL-SHIFTS ON CLEAN AND H2S-COVERED GAAS [J].

RANKE, W ;

FINSTER, J ;

KUHR, HJ .

SURFACE SCIENCE, 1987, 187 (01) :112-132

[7]

SANDROFF CJ, 1987, APPL PHYS LETT, V51, P493

[8]

SANSONE M, 1988, NUCL INSTRUM METH A, V246, P422

[9] GROWTH AND CHARACTERIZATION OF LATTICE-MATCHED CAXSR1-XF2 ON GAAS(100) [J].

SINHAROY, S ;

MCMULLIN, PG ;

GREGGI, J ;

LIN, YF .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :875-878

[10] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].

SPICER, WE ;

CHYE, PW ;

SKEATH, PR ;

SU, CY ;

LINDAU, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1422-1433

← 1 2 →