GROWTH AND CHARACTERIZATION OF LATTICE-MATCHED CAXSR1-XF2 ON GAAS(100)

[1] FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02): : L139 - L141

[2] EPITAXIAL-GROWTH OF SI FILMS ON CAF2/SI STRUCTURES WITH THIN SI LAYERS PREDEPOSITED AT ROOM-TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3566 - 3570

[3] FABRICATION OF MOSFETS IN SI/CAF2/SI HETEROEPITAXIAL STRUCTURES [J]. ELECTRONICS LETTERS, 1985, 21 (09) : 386 - 387

[4] CHOYKE WJ, 1986, MATER RES SOC S P, V60, P355

[5] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 415 - 420

[6] HETEROEPITAXY OF SEMICONDUCTOR-ON-INSULATOR STRUCTURES - SI AND GE ON CAF2/SI(111) [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) : 3886 - 3894

[7] SURFACE-MORPHOLOGY OF EPITAXIAL CAF2 FILMS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 519 - 521

[8] STRAIN-MEASUREMENT OF EPITAXIAL CAF2 ON SI(111) BY MEV ION CHANNELING [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1071 - 1073

[9] ON (G,GAMMA,N,Q)-TRANSLATION PLANES [J]. JOURNAL OF THE MATHEMATICAL SOCIETY OF JAPAN, 1985, 37 (01) : 157 - 164

[10] SURFACE-MORPHOLOGY OF EPITAXIAL CAF2 FILMS ON GAAS (100) [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1068 - 1070

[1] FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02): : L139 - L141

[2] EPITAXIAL-GROWTH OF SI FILMS ON CAF2/SI STRUCTURES WITH THIN SI LAYERS PREDEPOSITED AT ROOM-TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3566 - 3570

[3] FABRICATION OF MOSFETS IN SI/CAF2/SI HETEROEPITAXIAL STRUCTURES [J]. ELECTRONICS LETTERS, 1985, 21 (09) : 386 - 387

[4] CHOYKE WJ, 1986, MATER RES SOC S P, V60, P355

[5] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 415 - 420

[6] HETEROEPITAXY OF SEMICONDUCTOR-ON-INSULATOR STRUCTURES - SI AND GE ON CAF2/SI(111) [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) : 3886 - 3894

[7] SURFACE-MORPHOLOGY OF EPITAXIAL CAF2 FILMS ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (05) : 519 - 521

[8] STRAIN-MEASUREMENT OF EPITAXIAL CAF2 ON SI(111) BY MEV ION CHANNELING [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1071 - 1073

[9] ON (G,GAMMA,N,Q)-TRANSLATION PLANES [J]. JOURNAL OF THE MATHEMATICAL SOCIETY OF JAPAN, 1985, 37 (01) : 157 - 164

[10] SURFACE-MORPHOLOGY OF EPITAXIAL CAF2 FILMS ON GAAS (100) [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1068 - 1070