GROWTH AND CHARACTERIZATION OF LATTICE-MATCHED CAXSR1-XF2 ON GAAS(100)

[11] RAMAN CHARACTERIZATION OF TWINNING IN HETEROEPITAXIAL SEMICONDUCTOR LAYERS - GAAS/(CA,SR)F2 [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : 1025 - 1031

[12] CAF2/SI(111) - THIN-FILM CHARACTERIZATION BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1986, 34 (10): : 7471 - 7474

[13] INITIAL FORMATION OF THE INTERFACE BETWEEN A POLAR INSULATOR AND A NONPOLAR SEMICONDUCTOR - CAF2 ON SI(111) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1123 - 1127

[14] Onoda H., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P680

[15] ELECTRONIC-STRUCTURE OF THE CAF2/SI(111) INTERFACE [J]. PHYSICAL REVIEW B, 1986, 34 (10): : 7295 - 7306

[16] EPITAXIAL-GROWTH OF CAF2 ON GAAS(100) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 842 - 845

[17] EPITAXIAL-GROWTH OF LATTICE-MATCHED CAXSR1-XF2 ON (100) AND (110) GAAS SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1642 - 1646

[18] GAAS/(CA,SR)F2/(001) GAAS LATTICE-MATCHED STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1146 - 1148

[19] GROWTH OF SEMICONDUCTOR INSULATOR STRUCTURES - GAAS/FLUORIDE/GAAS (001) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 500 - 507

[20] LATTICE MATCHING AT ELEVATED SUBSTRATE-TEMPERATURE FOR GROWTH OF GAAS FILMS WITH GOOD ELECTRICAL-PROPERTIES ON CAXSR1-XF2/GAAS (100) STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (09) : 587 - 589

[11] RAMAN CHARACTERIZATION OF TWINNING IN HETEROEPITAXIAL SEMICONDUCTOR LAYERS - GAAS/(CA,SR)F2 [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : 1025 - 1031

[12] CAF2/SI(111) - THIN-FILM CHARACTERIZATION BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1986, 34 (10): : 7471 - 7474

[13] INITIAL FORMATION OF THE INTERFACE BETWEEN A POLAR INSULATOR AND A NONPOLAR SEMICONDUCTOR - CAF2 ON SI(111) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1123 - 1127

[14] Onoda H., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P680

[15] ELECTRONIC-STRUCTURE OF THE CAF2/SI(111) INTERFACE [J]. PHYSICAL REVIEW B, 1986, 34 (10): : 7295 - 7306

[16] EPITAXIAL-GROWTH OF CAF2 ON GAAS(100) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 842 - 845

[17] EPITAXIAL-GROWTH OF LATTICE-MATCHED CAXSR1-XF2 ON (100) AND (110) GAAS SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1642 - 1646

[18] GAAS/(CA,SR)F2/(001) GAAS LATTICE-MATCHED STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1146 - 1148

[19] GROWTH OF SEMICONDUCTOR INSULATOR STRUCTURES - GAAS/FLUORIDE/GAAS (001) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 500 - 507

[20] LATTICE MATCHING AT ELEVATED SUBSTRATE-TEMPERATURE FOR GROWTH OF GAAS FILMS WITH GOOD ELECTRICAL-PROPERTIES ON CAXSR1-XF2/GAAS (100) STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (09) : 587 - 589