LATTICE MATCHING AT ELEVATED SUBSTRATE-TEMPERATURE FOR GROWTH OF GAAS FILMS WITH GOOD ELECTRICAL-PROPERTIES ON CAXSR1-XF2/GAAS (100) STRUCTURES

被引：16

作者：

TSUTSUI, K

ISHIWARA, H

FURUKAWA, S

机构：

来源：

关键词：

D O I：

10.1063/1.96475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：587 / 589

页数：3

共 11 条

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[9] EPITAXIAL RELATIONS IN CAXSR1-XF2 FILMS GROWN ON GAAS (111) AND GE(111) SUBSTRATES
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