SURFACE-MORPHOLOGY OF EPITAXIAL CAF2 FILMS ON GAAS (100)

被引：12

作者：

HOFFMAN, RA

SINHAROY, S

FARROW, RFC

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 10期

关键词：

D O I：

10.1063/1.96382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1068 / 1070

页数：3

共 12 条

[1] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS [J].

FARROW, RFC ;

SULLIVAN, PW ;

WILLIAMS, GM ;

JONES, GR ;

CAMERON, DC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :415-420

[2]

FARROW RFC, 1985, MATER RES SOC S P, V37, P181

[3] SURFACE-MORPHOLOGY OF EPITAXIAL CAF2 FILMS ON SI SUBSTRATES [J].

FATHAUER, RW ;

SCHOWALTER, LJ .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :519-521

[4] EPITAXIAL-GROWTH OF BAF2 ON GE AND INP [J].

PHILLIPS, JM ;

FELDMAN, LC ;

GIBSON, JM ;

MCDONALD, ML .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :563-564

[5]

SCHEWALTER LJ, 1985, J APPL PHYS, V58, P302

[6] EPITAXIAL-GROWTH OF LANTHANIDE TRIFLUORIDES BY MBE [J].

SINHAROY, S ;

HOFFMAN, RA ;

RIEGER, JH ;

TAKEI, WJ ;

FARROW, RFC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :722-723

[7] EPITAXIAL-GROWTH OF CAF2 ON GAAS(100) [J].

SINHAROY, S ;

HOFFMAN, RA ;

RIEGER, JH ;

FARROW, RFC ;

NOREIKA, AJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :842-845

[8] PREPARATION OF A CLEAN GAAS(100) SURFACE WITHOUT GA OR AS VAPOR SOURCES [J].

SINHAROY, S ;

HOFFMAN, RA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1090-1092

[9] EPITAXIAL-GROWTH OF LATTICE-MATCHED CAXSR1-XF2 ON (100) AND (110) GAAS SUBSTRATES [J].

SISKOS, S ;

FONTAINE, C ;

MUNOZYAGUE, A .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1642-1646

[10] FABRICATION OF METAL EPITAXIAL INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING MOLECULAR-BEAM EPITAXY OF CAF2 ON SI [J].

SMITH, TP ;

PHILLIPS, JM ;

AUGUSTYNIAK, WM ;

STILES, PJ .

APPLIED PHYSICS LETTERS, 1984, 45 (08) :907-909

← 1 2 →