PREPARATION OF A CLEAN GAAS(100) SURFACE WITHOUT GA OR AS VAPOR SOURCES

被引：12

作者：

SINHAROY, S

HOFFMAN, RA

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 08期

关键词：

D O I：

10.1109/T-ED.1984.21667

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1090 / 1092

页数：3

共 10 条

[1] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS
ARTHUR, JR
[J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461
[2] RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO
BACHRACH, RZ
BAUER, RS
CHIARADIA, P
HANSSON, GV
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 335 - 343
[3] SILICON-ON-SAPPHIRE EPITAXY BY VACUUM SUBLIMATION - LEED-AUGER STUDIES AND ELECTRONIC PROPERTIES OF FILMS
CHANG, CC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (03): : 500 - &
[4] CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397
[5] COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES
DRATHEN, P
RANKE, W
JACOBI, K
[J]. SURFACE SCIENCE, 1978, 77 (01) : L162 - L166
[6] GROWTH OF EPITAXIAL FE ON GAAS BY METALORGANIC CVD
KAPLAN, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 551 - 553
[7] SILVER CONTACT ON GAAS (001) AND INP (001)
MASSIES, J
DEVOLDERE, P
LINH, NT
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1353 - 1357
[8] LASER-INDUCED SURFACE RECONSTRUCTION OF SEMICONDUCTORS AND METALS
MOISON, JM
BENSOUSSAN, M
[J]. SURFACE SCIENCE, 1983, 126 (1-3) : 294 - 300
[9] ELEVATED-TEMPERATURE LOW-ENERGY ION CLEANING OF GAAS
OELHAFEN, P
FREEOUF, JL
PETTIT, GD
WOODALL, JM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 787 - 790
[10] GROWTH AND CHARACTERIZATION OF LARGE DIAMETER UNDOPED SEMI-INSULATING GAAS FOR DIRECT ION-IMPLANTED FET TECHNOLOGY
THOMAS, RN
HOBGOOD, HM
ELDRIDGE, GW
BARRETT, DL
BRAGGINS, TT
[J]. SOLID-STATE ELECTRONICS, 1981, 24 (05) : 387 - &

← 1 →