X-RAY ANOMALOUS TRANSMISSION AND TOPOGRAPHY OF OXYGEN PRECIPITATION IN SILICON

被引：45

作者：

PATEL, JR ^{[1
]}

机构：

[1] BELL LABS,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.1662869

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3903 / 3906

页数：4

共 9 条

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[8]

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[9]

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