IMMA APPLICATIONS TO ION-IMPLANTATION IN SILICON-ON-SAPPHIRE

被引：7

作者：

PANCHOLY, RK

YOUNG, MYT

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 12期

关键词：

D O I：

10.1109/T-ED.1980.20261

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2256 / 2261

页数：6

共 11 条

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[9] 2-MUM SILICON-GATE C-MOS-SOS TECHNOLOGY [J].

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[10] SODIUM DISTRIBUTION IN THERMAL OXIDE ON SILICON BY RADIOCHEMICAL AND MOS ANALYSIS [J].

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