DIFFUSION OF GALLIUM IN SILICON

被引：25

作者：

HARIDOSS, S ^{[1
]}

BENIERE, F ^{[1
]}

GAUNEAU, M ^{[1
]}

RUPERT, A ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,DEPT FMI,F-22301 LANNION,FRANCE

来源：

关键词：

D O I：

10.1063/1.327541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5833 / 5837

页数：5

共 21 条

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[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6838 - 6844
[4] FAIR RB, 1977, SEMICONDUCTOR SILICO, P968
[5] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON
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DITZENBERGER, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553
[6] GAUNEAU M, 1980, ANALUSIS, V8, P142
[7] DOPANT DIFFUSION IN SILICON .3. ACCEPTORS
GHOSHTAG.RN
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08): : 2507 - &
[8] LOW CONCENTRATION DIFFUSION IN SILICON UNDER SEALED TUBE CONDITIONS
GHOSHTAGORE, RN
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (10) : 1113 - +
[9] MODEL OF DOPED-OXIDE-SOURCE DIFFUSION IN SILICON
GHOSHTAGORE, RN
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (10) : 1065 - 1073
[10] HOWES HJ, 1970, P EUROPEAN C ION IMP, P97