CAPACITIVE HYSTERESIS EFFECTS IN 5.0 NM SINGLE AND DOUBLE BARRIER ALAS/GAAS TUNNELING STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：3

作者：

CAMPBELL, AC

KESAN, VP

CROOK, GE

MAZIAR, CM

NEIKIRK, DP

STREETMAN, BG

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584381

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：651 / 656

页数：6

共 16 条

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[9]

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[10]

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