ELECTRONIC-PROPERTIES OF DEFECTS CREATED BY 1.6-GEV ARGON IONS IN SILICON

被引：9

作者：

KRYNICKI, J

TOULEMONDE, M

MULLER, JC

SIFFERT, P

机构：

[1] CTR INTERDISCIPLINE RECH IONS LOURDS,BP 5133,F-14040 CAEN,FRANCE

[2] CTR RECH NUCL,F-67037 STRASBOURG,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 2卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(89)90084-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：105 / 110

页数：6

共 42 条

[1] ANNEALING KINETICS DURING RAPID AND CLASSICAL THERMAL-PROCESSING OF A LASER-INDUCED DEFECT IN N-TYPE SILICON [J].

ADEKOYA, WO ;

MULLER, JC ;

SIFFERT, P .

APPLIED PHYSICS LETTERS, 1986, 49 (21) :1429-1431

[2] ELECTRICAL BEHAVIOR OF GROUP-3 AND GROUP-V IMPLANTED DOPANTS IN SILICON [J].

BARON, R ;

SHIFRIN, GA ;

MARSH, OJ ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3702-&

[3]

BLOSSE A, 1979, I PHYS C SER, V59, P482

[4] MEGAVOLT ARSENIC IMPLANTATION INTO SILICON [J].

BYRNE, PF ;

CHEUNG, NW ;

SADANA, DK .

THIN SOLID FILMS, 1982, 95 (04) :363-367

[5] DEEP LEVEL DEFECTS IN SILICON AFTER BEAM PROCESSING IN THE SOLID-PHASE REGIME [J].

CHANTRE, A .

JOURNAL DE PHYSIQUE, 1983, 44 (NC-5) :269-280

[6]

DEARNALEY G., 1973, ION IMPLANTATION

[7] RESULTS OF ION-IMPLANTATION INTO SILICON IN THE 100 MEV RANGE .1. OXYGEN AND BORON IMPLANTATION [J].

FAHRNER, WR ;

HEIDEMANN, K ;

SCHOTTLE, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (02) :463-472

[8]

FAHRNER WR, 1982, PHYS STATUS SOLIDI A, V71, P121, DOI 10.1002/pssa.2210710114

[9] SIMPLE SIGNAL ANALYZER FOR DEEP-LEVEL TRAP SPECTROSCOPY [J].

GULDBERG, J .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (10) :1016-1018

[10] THERMALLY GENERATED ELECTRON TRAPS IN BORON-IMPLANTED, PHOSPHORUS-DOPED SILICON [J].

JACKSON, DB ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) :2225-2229

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