ELECTRONIC-PROPERTIES OF DEFECTS CREATED BY 1.6-GEV ARGON IONS IN SILICON

被引：9

作者：

KRYNICKI, J

TOULEMONDE, M

MULLER, JC

SIFFERT, P

机构：

[1] CTR INTERDISCIPLINE RECH IONS LOURDS,BP 5133,F-14040 CAEN,FRANCE

[2] CTR RECH NUCL,F-67037 STRASBOURG,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 2卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(89)90084-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：105 / 110

页数：6

共 42 条

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