DEEP-LEVEL TRAPS IN LOW-DOSE BORON-IMPLANTED AND LOW-TEMPERATURE ANNEALED SILICON

被引：6

作者：

MITIC, A

SATO, T

NISHI, H

HASHIMOTO, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 08期

关键词：

D O I：

10.1063/1.92060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：727 / 729

页数：3

共 18 条

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[4]

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[8] ELECTRONIC DEFECT LEVELS IN SELF-IMPLANTED CW LASER-ANNEALED SILICON [J].

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APPLIED PHYSICS LETTERS, 1979, 34 (10) :704-706

[9] DEFECT STATES ASSOCIATED WITH DISLOCATIONS IN SILICON [J].

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[10]

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