ANALYSIS AND ORIGIN OF POINT-DEFECTS IN SILICON AFTER LIQUID-PHASE TRANSIENT ANNEALING

被引：11

作者：

MESLI, A

MULLER, JC

SIFFERT, P

机构：

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1983543

中图分类号：

学科分类号：

摘要：

引用

页码：281 / 295

页数：15

共 49 条

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[8] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J].

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