ELECTRON-SPIN RESONANCE OF OXYGEN-NITROGEN COMPLEX IN SILICON

被引：23

作者：

HARA, A

FUKUDA, T

MIYABO, T

HIRAI, I

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 01期

关键词：

D O I：

10.1143/JJAP.28.142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：142 / 143

页数：2

共 9 条

[1]

Benton J. L., 1985, Thirteenth International Conference on Defects in Semiconductors, P647

[2] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE [J].

FEHER, G .

PHYSICAL REVIEW, 1959, 114 (05) :1219-1244

[3] ELECTRON-PARAMAGNETIC-RES STUDIES OF HEAT-TREATMENT CENTERS IN P-TYPE SILICON [J].

GREGORKIEWICZ, T ;

VANWEZEP, DA ;

BEKMAN, HHPT ;

AMMERLAAN, CAJ .

PHYSICAL REVIEW B, 1987, 35 (08) :3810-3817

[4] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].

KOHN, W .

SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320

[5]

Lee K. M., 1985, MICROSCOPIC IDENTIFI, V46, P263

[6] EPR-SPECTRA OF HEAT-TREATMENT CENTERS IN OXYGEN-RICH SILICON [J].

MULLER, SH ;

SPRENGER, M ;

SIEVERTS, EG ;

AMMERLAAN, CAJ .

SOLID STATE COMMUNICATIONS, 1978, 25 (12) :987-990

[7] SITE SYMMETRY AND GROUND-STATE CHARACTERISTICS FOR THE OXYGEN DONOR IN SILICON [J].

STAVOLA, M ;

LEE, KM ;

NABITY, JC ;

FREELAND, PE ;

KIMERLING, LC .

PHYSICAL REVIEW LETTERS, 1985, 54 (24) :2639-2642

[8] NITROGEN-OXYGEN COMPLEXES AS SHALLOW DONORS IN SILICON-CRYSTALS [J].

SUEZAWA, M ;

SUMINO, K ;

HARADA, H ;

ABE, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (10) :L859-L861

[9] THE NATURE OF NITROGEN-OXYGEN COMPLEXES IN SILICON [J].

SUEZAWA, M ;

SUMINO, K ;

HARADA, H ;

ABE, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (01) :62-67

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