NI-INP REACTION - FORMATION OF AMORPHOUS AND CRYSTALLINE TERNARY PHASES

被引：45

作者：

SANDS, T ^{[1
]}

CHANG, CC ^{[1
]}

KAPLAN, AS ^{[1
]}

KERAMIDAS, VG ^{[1
]}

KRISHNAN, KM ^{[1
]}

WASHBURN, J ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 19期

关键词：

D O I：

10.1063/1.97851

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1346 / 1348

页数：3

共 12 条

[1]

Appelbaum A., 1986, P MRS TMS NE REGIONA, P409

[2]

APPELBAUM A, IN PRESS J ELECTRON

[3]

CARON RP, COMMUNICATION

[4] QUANTITATIVE-ANALYSIS OF THIN SPECIMENS [J].

CLIFF, G ;

LORIMER, GW .

JOURNAL OF MICROSCOPY-OXFORD, 1975, 103 (MAR) :203-207

[5]

ELBORAGY M, 1970, Z METALLKD, V61, P579

[6] REACTIONS OF PD ON (100) AND (110) GAAS-SURFACES [J].

KUAN, TS ;

FREEOUF, JL ;

BATSON, PE ;

WILKIE, EL .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) :1519-1526

[7] INTERFACIAL REACTIONS BETWEEN NI FILMS AND GAAS [J].

LAHAV, A ;

EIZENBERG, M ;

KOMEM, Y .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :991-1001

[8] ALLOYING REACTION IN THIN NICKEL FILMS DEPOSITED ON GAAS [J].

OGAWA, M .

THIN SOLID FILMS, 1980, 70 (01) :181-189

[9] TERNARY PHASES IN THE PD-GAAS SYSTEM - IMPLICATIONS FOR SHALLOW CONTACTS TO GAAS [J].

SANDS, T ;

KERAMIDAS, VG ;

GRONSKY, R ;

WASHBURN, J .

MATERIALS LETTERS, 1985, 3 (9-10) :409-413

[10] INITIAL-STAGES OF THE PD-GAAS REACTION - FORMATION AND DECOMPOSITION OF TERNARY PHASES [J].

SANDS, T ;

KERAMIDAS, VG ;

GRONSKY, R ;

WASHBURN, J .

THIN SOLID FILMS, 1986, 136 (01) :105-122

← 1 2 →